Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/6075
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dc.contributor.authorMensah, S Y-
dc.contributor.authorKangah, G K-
dc.date.accessioned2021-09-08T12:55:18Z-
dc.date.available2021-09-08T12:55:18Z-
dc.date.issued1991-
dc.identifier.issn23105496-
dc.identifier.urihttp://hdl.handle.net/123456789/6075-
dc.description5p:, ill.en_US
dc.description.abstractThe thermoelccvic effect in a semiconductor rupcrlatlicc in a non-quantize delectric Beld is investigated for elections of the lowest muband in the Linear approamation of VT. nalytlcll expressionsfor the thermopower and the kat conductinty cocfficient are obtained as functions of the superlattice parsmeters A and d, temperature, concentration and electric field E. The results confirm the fact thar tepending on the relation berueen A and other characteristic energies of the carrier chdrge (kT, E and h/r) the camer charges cm behave either as a quasi-two-dimensional or as a three-dimensional electron gas. The prospect of using a superlanice as a good-quality and highly efficient thermoelement is also proposeden_US
dc.language.isoenen_US
dc.publisherUniversity of Cape Coasten_US
dc.titleThe thermoelectric effect in a semiconductor superlattice in a non-quantized electric fielden_US
dc.typeArticleen_US
Appears in Collections:Department of Mathematics & Statistics

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